半導(dǎo)體一些英文術(shù)語(yǔ)你了解嗎？半導(dǎo)體一些術(shù)語(yǔ)的中英文對(duì)照

半導(dǎo)體產(chǎn)業(yè)作為一個(gè)起源于國(guó)外的技術(shù)，很多相關(guān)的技術(shù)術(shù)語(yǔ)都是用英文表述。且由于很多從業(yè)者都有海外經(jīng)歷，或者他們習(xí)慣于用英文表述相關(guān)的工藝和技術(shù)節(jié)點(diǎn)，那就導(dǎo)致很多的英文術(shù)語(yǔ)被翻譯為中文之后，很多人不能對(duì)照得上，或者不知道怎么翻譯。在這里我們整理一些常用的半導(dǎo)體術(shù)語(yǔ)的中英文版本，希望對(duì)大家有所幫助。如果當(dāng)中有出錯(cuò)，請(qǐng)幫忙糾正，謝謝！

常用半導(dǎo)體中英對(duì)照表

離子注入機(jī) ion implanter

LSS理論 Lindhand Scharff and Schiott theory，又稱“林漢德-斯卡夫-斯高特理論”。

溝道效應(yīng) channeling effect

射程分布 range distribution

深度分布 depth distribution

投影射程 projected range

阻止距離 stopping distance

阻止本領(lǐng) stopping power

標(biāo)準(zhǔn)阻止截面 standard stopping cross section

退火 annealing

激活能 activation energy

等溫退火 isothermal annealing

激光退火 laser annealing

應(yīng)力感生缺陷 stress-induced defect

擇優(yōu)取向 preferred orientation

制版工藝 mask-making technology

圖形畸變 pattern distortion

初縮 first minification

精縮 final minification

母版 master mask

鉻版 chromium plate

干版 dry plate

乳膠版 emulsion plate

透明版 see-through plate

高分辨率版 high resolution plate, HRP

超微粒干版 plate for ultra-microminiaturization

掩模 mask

掩模對(duì)準(zhǔn) mask alignment

對(duì)準(zhǔn)精度 alignment precision

光刻膠 photoresist，又稱“光致抗蝕劑”。

負(fù)性光刻膠 negative photoresist

正性光刻膠 positive photoresist

無(wú)機(jī)光刻膠 inorganic resist

多層光刻膠 multilevel resist

電子束光刻膠 electron beam resist

X射線光刻膠 X-ray resist

刷洗 scrubbing

甩膠 spinning

涂膠 photoresist coating

后烘 postbaking

光刻 photolithography

X射線光刻 X-ray lithography

電子束光刻 electron beam lithography

離子束光刻 ion beam lithography

深紫外光刻 deep-UV lithography

*** mask aligner

投影*** projection mask aligner

曝光 exposure

接觸式曝光法 contact exposure method

接近式曝光法 proximity exposure method

光學(xué)投影曝光法 optical projection exposure method

電子束曝光系統(tǒng) electron beam exposure system

分步重復(fù)系統(tǒng) step-and-repeat system

顯影 development

線寬 linewidth

去膠 stripping of photoresist

氧化去膠 removing of photoresist by oxidation

等離子［體］去膠 removing of photoresist by plasma

刻蝕 etching

干法刻蝕 dry etching

反應(yīng)離子刻蝕 reactive ion etching, RIE

各向同性刻蝕 isotropic etching

各向異性刻蝕 anisotropic etching

反應(yīng)濺射刻蝕 reactive sputter etching

離子銑 ion beam milling，又稱“離子磨削”。

等離子［體］刻蝕 plasma etching

鉆蝕 undercutting

剝離技術(shù) lift-off technology，又稱“浮脫工藝”。

終點(diǎn)監(jiān)測(cè) endpoint monitoring

金屬化 metallization

互連 interconnection

多層金屬化 multilevel metallization

電遷徙 electromigration

回流 reflow

磷硅玻璃 phosphorosilicate glass

硼磷硅玻璃 boron-phosphorosilicate glass

鈍化工藝 passivation technology

多層介質(zhì)鈍化 multilayer dielectric passivation

劃片 scribing

電子束切片 electron beam slicing

燒結(jié) sintering

印壓 indentation

熱壓焊 thermocompression bonding

熱超聲焊 thermosonic bonding

冷焊 cold welding

點(diǎn)焊 spot welding

球焊 ball bonding

楔焊 wedge bonding

內(nèi)引線焊接 inner lead bonding

外引線焊接 outer lead bonding

梁式引線 beam lead

裝架工藝 mounting technology

附著 adhesion

封裝 packaging

金屬封裝 metallic packaging

陶瓷封裝 ceramic packaging

扁平封裝 flat packaging

塑封 plastic package

玻璃封裝 glass packaging

微封裝 micropackaging，又稱“微組裝”。

管殼 package

管芯 die

引線鍵合 lead bonding

引線框式鍵合 lead frame bonding

帶式自動(dòng)鍵合 tape automated bonding, TAB

激光鍵合 laser bonding

超聲鍵合 ultrasonic bonding

紅外鍵合 infrared bonding

微電子辭典大集合

（按首字母順序排序）

A

Abrupt junction 突變結(jié)Accelerated testing 加速實(shí)驗(yàn)Acceptor 受主Acceptor atom 受主原子Accumulation 積累、堆積Accumulating contact 積累接觸

Accumulation region 積累區(qū)Accumulation layer 積累層Active region 有源區(qū)Active component 有源元Active device 有源器件Activation 激活

Activation energy 激活能Active region 有源（放大）區(qū)Admittance 導(dǎo)納Allowed band 允帶Alloy-junction device合金結(jié)器件

Aluminum(Aluminium) 鋁

Aluminum – oxide 鋁氧化物Aluminum passivation 鋁鈍化Ambipolar 雙極的Ambient temperature 環(huán)境溫度Amorphous 無(wú)定形的，非晶體的Amplifier 功放 擴(kuò)音器 放大器Analogue(Analog) comparator 模擬比較器

Angstrom 埃

Anneal 退火Anisotropic 各向異性的Anode 陽(yáng)極Arsenic (AS) 砷Auger 俄歇Auger process 俄歇過(guò)程Avalanche 雪崩Avalanche breakdown 雪崩擊穿Avalanche excitation雪崩激發(fā)

B

Background carrier 本底載流子Background doping 本底摻雜Backward 反向Backward bias 反向偏置Ballasting resistor 整流電阻

Ball bond 球形鍵合Band 能帶Band gap 能帶間隙Barrier 勢(shì)壘Barrier layer 勢(shì)壘層Barrier width 勢(shì)壘寬度

Base 基極Base contact 基區(qū)接觸Base stretching 基區(qū)擴(kuò)展效應(yīng)Base transit time 基區(qū)渡越時(shí)間Base transport efficiency基區(qū)輸運(yùn)系數(shù)Base-width modulation基區(qū)寬度調(diào)制

Basis vector 基矢Bias 偏置Bilateral switch 雙向開(kāi)關(guān)Binary code 二進(jìn)制代碼Binary compound semiconductor 二元化合物半導(dǎo)體Bipolar 雙極性的Bipolar Junction Transistor (BJT)雙極晶體管

Bloch 布洛赫Blocking band 阻擋能帶Blocking contact 阻擋接觸Body - centered 體心立方Body-centred cubic structure 體立心結(jié)構(gòu)

Boltzmann 波爾茲曼Bond 鍵、鍵合Bonding electron 價(jià)電子Bonding pad 鍵合點(diǎn)Bootstrap circuit 自舉電路

Bootstrapped emitter follower 自舉射極跟隨器

Boron 硼B(yǎng)orosilicate glass 硼硅玻璃Boundary condition 邊界條件Bound electron 束縛電子Breadboard 模擬板、實(shí)驗(yàn)板Break down 擊穿Break over 轉(zhuǎn)折Brillouin 布里淵Brillouin zone 布里淵區(qū)Built-in 內(nèi)建的Build-in electric field 內(nèi)建電場(chǎng)

Bulk 體/體內(nèi)

Bulk absorption 體吸收

Bulk generation 體產(chǎn)生Bulk recombination 體復(fù)合Burn - in 老化Burn out 燒毀Buried channel 埋溝Buried diffusion region 隱埋擴(kuò)散區(qū)

C

Can 外殼Capacitance 電容Capture cross section 俘獲截面Capture carrier 俘獲載流子Carrier 載流子、載波Carry bit 進(jìn)位位Carry-in bit 進(jìn)位輸入Carry-out bit 進(jìn)位輸出

Cascade 級(jí)聯(lián)Case 管殼Cathode 陰極Center 中心Ceramic 陶瓷（的）Channel 溝道

Channel breakdown 溝道擊穿

Channel current 溝道電流Channel doping 溝道摻雜Channel shortening 溝道縮短Channel width 溝道寬度Characteristic impedance 特征阻抗Charge 電荷、充電Charge-compensation effects 電荷補(bǔ)償效應(yīng)

Charge conservation 電荷守恒Charge neutrality condition 電中性條件Charge drive/exchange/sharing/transfer/storage 電荷驅(qū)動(dòng)/交換/共享/轉(zhuǎn)移/存儲(chǔ)Chemmical etching 化學(xué)腐蝕法Chemically-Polish 化學(xué)拋光Chemmically-Mechanically Polish (CMP) 化學(xué)機(jī)械拋光

Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二極管Cleavage plane 解理面Clock rate 時(shí)鐘頻率Clock generator 時(shí)鐘發(fā)生器Clock flip-flop 時(shí)鐘觸發(fā)器Close-packed structure 密堆積結(jié)構(gòu)

Close-loop gain 閉環(huán)增益Collector 集電極Collision 碰撞Compensated OP-AMP 補(bǔ)償運(yùn)放Common-base/collector/emitter connection 共基極/集電極/發(fā)射極連接Common-gate/drain/source connection 共柵/漏/源連接

Common-mode gain 共模增益Common-mode input 共模輸入Common-mode rejection ratio (CMRR) 共模抑制比

Compatibility 兼容性Compensation 補(bǔ)償Compensated impurities 補(bǔ)償雜質(zhì)

Compensated semiconductor 補(bǔ)償半導(dǎo)體Complementary Darlington circuit 互補(bǔ)達(dá)林頓電路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)互補(bǔ)金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管

Complementary error function 余誤差函數(shù)Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 計(jì)算機(jī)輔助設(shè)計(jì)/ 測(cè)試 /制造Compound Semiconductor 化合物半導(dǎo)體

Conductance 電導(dǎo)Conduction band (edge) 導(dǎo)帶(底)Conduction level/state 導(dǎo)帶態(tài)Conductor 導(dǎo)體Conductivity 電導(dǎo)率Configuration 組態(tài)Conlomb 庫(kù)侖Conpled Configuration Devices 結(jié)構(gòu)組態(tài)

Constants 物理常數(shù)Constant energy surface 等能面Constant-source diffusion恒定源擴(kuò)散Contact 接觸Contamination 治污Continuity equation 連續(xù)性方程

Contact hole 接觸孔Contact potential 接觸電勢(shì)Continuity condition 連續(xù)性條件Contra doping 反摻雜Controlled 受控的Converter 轉(zhuǎn)換器Conveyer 傳輸器Copper interconnection system 銅互連系統(tǒng)

Couping 耦合Covalent 共階的Crossover 跨交Critical 臨界的Crossunder 穿交Crucible坩堝Crystal defect/face/orientation/lattice 晶體缺陷/晶面/晶向/晶格

Current density 電流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 電流漂移/驅(qū)動(dòng)/共享Current Sense 電流取樣Curvature 彎曲Custom integrated circuit 定制集成電路Cylindrical 柱面的Czochralshicrystal 直立單晶Czochralski technique 切克勞斯基技術(shù)（Cz法直拉晶體J）

D

Dangling bonds 懸掛鍵Dark current 暗電流Dead time 空載時(shí)間Debye length 德拜長(zhǎng)度De.broglie 德布洛意Decderate 減速Decibel (dB) 分貝Decode 譯碼

Deep acceptor level 深受主能級(jí)Deep donor level 深施主能級(jí)Deep impurity level 深度雜質(zhì)能級(jí)Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 簡(jiǎn)并半導(dǎo)體

Degeneracy 簡(jiǎn)并度Degradation 退化Degree Celsius(centigrade) /Kelvin 攝氏/開(kāi)氏溫度

Delay 延遲 Density 密度Density of states 態(tài)密度Depletion 耗盡Depletion approximation 耗盡近似

Depletion contact 耗盡接觸Depletion depth 耗盡深度Depletion effect 耗盡效應(yīng)Depletion layer 耗盡層Depletion MOS 耗盡MOSDepletion region 耗盡區(qū)Deposited film 淀積薄膜Deposition process 淀積工藝Design rules 設(shè)計(jì)規(guī)則Die 芯片（復(fù)數(shù)dice）

Diode 二極管Dielectric 介電的Dielectric isolation 介質(zhì)隔離Difference-mode input 差模輸入Differential amplifier 差分放大器Differential capacitance 微分電容

Diffused junction 擴(kuò)散結(jié)Diffusion 擴(kuò)散Diffusion coefficient 擴(kuò)散系數(shù)Diffusion constant 擴(kuò)散常數(shù)Diffusivity 擴(kuò)散率Diffusion capacitance/barrier/current/furnace 擴(kuò)散電容/勢(shì)壘/電流/爐

Digital circuit 數(shù)字電路Dipole domain 偶極疇Dipole layer 偶極層Direct-coupling 直接耦合Direct-gap semiconductor 直接帶隙半導(dǎo)體

Direct transition 直接躍遷Discharge 放電Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布電容Distributed model 分布模型Displacement 位移

Dislocation 位錯(cuò)

Domain 疇 Donor 施主Donor exhaustion 施主耗盡Dopant 摻雜劑Doped semiconductor 摻雜半導(dǎo)體Doping concentration 摻雜濃度Double-diffusive MOS(DMOS)雙擴(kuò)散MOS.

Drift 漂移

Drift field 漂移電場(chǎng)Drift mobility 遷移率Dry etching 干法腐蝕Dry/wet oxidation 干/濕法氧化Dose 劑量Duty cycle 工作周期Dual-in-line package （DIP） 雙列直插式封裝

Dynamics 動(dòng)態(tài)Dynamic characteristics 動(dòng)態(tài)屬性Dynamic impedance 動(dòng)態(tài)阻抗

E

Early effect 厄利效應(yīng)Early failure 早期失效Effective mass 有效質(zhì)量Einstein relation(ship) 愛(ài)因斯坦關(guān)系Electric Erase Programmable Read Only Memory(E2PROM) 一次性電可擦除只讀存儲(chǔ)器

Electrode 電極Electrominggratim 電遷移Electron affinity 電子親和勢(shì)Electronic -grade 電子能Electron-beam photo-resist exposure 光致抗蝕劑的電子束曝光

Electron gas 電子氣Electron-grade water 電子級(jí)純水Electron trapping center 電子俘獲中心Electron Volt (eV) 電子伏Electrostatic 靜電的Element 元素/元件/配件Elemental semiconductor 元素半導(dǎo)體

Ellipse 橢圓Ellipsoid 橢球Emitter 發(fā)射極Emitter-coupled logic 發(fā)射極耦合邏輯Emitter-coupled pair 發(fā)射極耦合對(duì)Emitter follower 射隨器Empty band 空帶Emitter crowding effect 發(fā)射極集邊（擁擠）效應(yīng)Endurance test =life test 壽命測(cè)試

Energy state 能態(tài)Energy momentum diagram 能量-動(dòng)量(E-K)圖Enhancement mode 增強(qiáng)型模式Enhancement MOS 增強(qiáng)性MOS Entefic (低)共溶的Environmental test 環(huán)境測(cè)試

Epitaxial 外延的Epitaxial layer 外延層Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效電路

Equilibrium majority /minority carriers 平衡多數(shù)/少數(shù)載流子Erasable Programmable ROM (EPROM)可搽?。?a target="_blank">編程）存儲(chǔ)器Error function complement 余誤差函數(shù)

Etch 刻蝕Etchant 刻蝕劑Etching mask 抗蝕劑掩模Excess carrier 過(guò)剩載流子Excitation energy 激發(fā)能Excited state 激發(fā)態(tài)Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 雜質(zhì)半導(dǎo)體

F

Face - centered 面心立方Fall time 下降時(shí)間Fan-in 扇入Fan-out 扇出Fast recovery 快恢復(fù)Fast surface states 快界面態(tài)Feedback 反饋Fermi level 費(fèi)米能級(jí)Fermi-Dirac Distribution 費(fèi)米-狄拉克分布

Femi potential 費(fèi)米勢(shì)Fick equation 菲克方程（擴(kuò)散）Field effect transistor 場(chǎng)效應(yīng)晶體管Field oxide 場(chǎng)氧化層Filled band 滿帶

Film 薄膜Flash memory 閃爍存儲(chǔ)器Flat band 平帶Flat pack 扁平封裝Flicker noise 閃爍（變）噪聲Flip-flop toggle 觸發(fā)器翻轉(zhuǎn)

Floating gate 浮柵Fluoride etch 氟化氫刻蝕Forbidden band 禁帶Forward bias 正向偏置

Forward blocking /conducting正向阻斷/導(dǎo)通

Frequency deviation noise頻率漂移噪聲Frequency response 頻率響應(yīng)Function 函數(shù)

G

Gain 增益

Gallium-Arsenide(GaAs) 砷化鉀Gamy ray r 射線Gate 門(mén)、柵、控制極Gate oxide 柵氧化層Gauss（ian） 高斯Gaussian distribution profile 高斯摻雜分布Generation-recombination 產(chǎn)生-復(fù)合

Geometries 幾何尺寸Germanium(Ge) 鍺Graded 緩變的Graded (gradual) channel 緩變溝道

Graded junction 緩變結(jié)Grain 晶粒Gradient 梯度Grown junction 生長(zhǎng)結(jié)Guard ring 保護(hù)環(huán)Gummel-Poom model 葛謀-潘 模型Gunn - effect 狄氏效應(yīng)

H

Hardened device 輻射加固器件

Heat of formation 形成熱Heat sink 散熱器、熱沉Heavy/light hole band 重/輕 空穴帶

Heavy saturation 重?fù)诫sHell - effect 霍爾效應(yīng)Heterojunction 異質(zhì)結(jié)Heterojunction structure 異質(zhì)結(jié)結(jié)構(gòu)Heterojunction Bipolar Transistor（HBT）異質(zhì)結(jié)雙極型晶體

High field property 高場(chǎng)特性High-performance MOS.( H-MOS)高性能MOS. Hormalized 歸一化Horizontal epitaxial reactor 臥式外延反應(yīng)器

Hot carrior 熱載流子Hybrid integration 混合集成

I

Image - force 鏡象力Impact ionization 碰撞電離Impedance 阻抗Imperfect structure 不完整結(jié)構(gòu)Implantation dose 注入劑量Implanted ion 注入離子

Impurity 雜質(zhì)Impurity scattering 雜志散射Incremental resistance 電阻增量（微分電阻）

In-contact mask 接觸式掩模Indium tin oxide (ITO) 銦錫氧化物Induced channel 感應(yīng)溝道

Infrared 紅外的Injection 注入Input offset voltage 輸入失調(diào)電壓Insulator 絕緣體Insulated Gate FET(IGFET)絕緣柵FET

Integrated injection logic集成注入邏輯

Integration 集成、積分Interconnection 互連Interconnection time delay 互連延時(shí)Interdigitated structure 交互式結(jié)構(gòu)

Interface 界面Interference 干涉International system of unions國(guó)際單位制

Internally scattering 谷間散射Interpolation 內(nèi)插法Intrinsic 本征的Intrinsic semiconductor 本征半導(dǎo)體Inverse operation 反向工作

Inversion 反型Inverter 倒相器Ion 離子Ion beam 離子束Ion etching 離子刻蝕Ion implantation 離子注入Ionization 電離Ionization energy 電離能Irradiation 輻照Isolation land 隔離島Isotropic 各向同性

J

Junction FET(JFET) 結(jié)型場(chǎng)效應(yīng)管Junction isolation 結(jié)隔離Junction spacing 結(jié)間距Junction side-wall 結(jié)側(cè)壁

L

Latch up 閉鎖Lateral 橫向的Lattice 晶格Layout 版圖Lattice binding/cell/constant/defect/distortion 晶格結(jié)合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸變

Leakage current （泄）漏電流Level shifting 電平移動(dòng)Life time 壽命linearity 線性度Linked bond 共價(jià)鍵Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生長(zhǎng)技術(shù)

Lithography 光刻Light Emitting Diode(LED) 發(fā)光二極管Load line or Variable 負(fù)載線Locating and Wiring 布局布線Longitudinal 縱向的Logic swing 邏輯擺幅Lorentz 洛淪茲Lumped model 集總模型

M

Majority carrier 多數(shù)載流子Mask 掩膜板，光刻板Mask level 掩模序號(hào)Mask set 掩模組Mass - action law質(zhì)量守恒定律Master-slave D flip-flop主從D觸發(fā)器

Matching 匹配Maxwell 麥克斯韋Mean free path 平均自由程Meandered emitter junction梳狀發(fā)射極結(jié)Mean time before failure (MTBF) 平均工作時(shí)間

Megeto - resistance 磁阻Mesa 臺(tái)面MESFET-Metal Semiconductor金屬半導(dǎo)體FETMetallization 金屬化Microelectronic technique 微電子技術(shù)Microelectronics 微電子學(xué)Millen indices 密勒指數(shù)Minority carrier 少數(shù)載流子

Misfit 失配Mismatching 失配Mobile ions 可動(dòng)離子Mobility 遷移率Module 模塊Modulate 調(diào)制Molecular crystal分子晶體Monolithic IC 單片IC

MOSFET金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管

Mos. Transistor(MOST )MOS. 晶體管Multiplication 倍增Modulator 調(diào)制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模塊Multiplication coefficient倍增因子

N

Naked chip 未封裝的芯片（裸片）Negative feedback 負(fù)反饋Negative resistance 負(fù)阻Nesting 套刻N(yùn)egative-temperature-coefficient 負(fù)溫度系數(shù)Noise margin 噪聲容限Nonequilibrium 非平衡Nonrolatile 非揮發(fā)（易失）性Normally off/on 常閉/開(kāi)Numerical analysis 數(shù)值分析

O

Occupied band 滿帶Officienay 功率Offset 偏移、失調(diào)On standby 待命狀態(tài)Ohmic contact 歐姆接觸Open circuit 開(kāi)路Operating point 工作點(diǎn)Operating bias 工作偏置Operational amplifier (OPAMP)運(yùn)算放大器

Optical photon =photon 光子Optical quenching光猝滅Optical transition 光躍遷Optical-coupled isolator光耦合隔離器Organic semiconductor有機(jī)半導(dǎo)體Orientation 晶向、定向

Outline 外形Out-of-contact mask非接觸式掩模Output characteristic 輸出特性O(shè)utput voltage swing 輸出電壓擺幅Overcompensation 過(guò)補(bǔ)償Over-current protection 過(guò)流保護(hù)Over shoot 過(guò)沖Over-voltage protection 過(guò)壓保護(hù)

Overlap 交迭Overload 過(guò)載Oscillator 振蕩器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化層鈍化

P

Package 封裝Pad 壓焊點(diǎn)Parameter 參數(shù)Parasitic effect 寄生效應(yīng)Parasitic oscillation 寄生振蕩Passination 鈍化Passive component 無(wú)源元件

Passive device 無(wú)源器件Passive surface 鈍化界面Parasitic transistor 寄生晶體管Peak-point voltage 峰點(diǎn)電壓Peak voltage 峰值電壓Permanent-storage circuit 永久存儲(chǔ)電路

Period 周期Periodic table 周期表Permeable - base 可滲透基區(qū)Phase-lock loop 鎖相環(huán)Phase drift 相移Phonon spectra 聲子譜Photo conduction 光電導(dǎo)

Photo diode 光電二極管Photoelectric cell 光電池Photoelectric effect 光電效應(yīng)Photoenic devices 光子器件Photolithographic process 光刻工藝(photo) resist （光敏）抗腐蝕劑

Pin 管腳Pinch off 夾斷Pinning of Fermi level 費(fèi)米能級(jí)的釘扎（效應(yīng)）Planar process 平面工藝Planar transistor 平面晶體管

Plasma 等離子體Plezoelectric effect 壓電效應(yīng)Poisson equation 泊松方程Point contact 點(diǎn)接觸Polarity 極性Polycrystal 多晶Polymer semiconductor聚合物半導(dǎo)體

Poly-silicon 多晶硅Potential (電)勢(shì)Potential barrier 勢(shì)壘Potential well 勢(shì)阱Power dissipation 功耗Power transistor 功率晶體管Preamplifier 前置放大器Primary flat 主平面Principal axes 主軸Print-circuit board(PCB) 印制電路板

Probability 幾率Probe 探針Process 工藝Propagation delay 傳輸延時(shí)Pseudopotential method 膺勢(shì)發(fā)

Punch through 穿通Pulse triggering/modulating 脈沖觸發(fā)/調(diào)制

Pulse Widen Modulator(PWM) 脈沖寬度調(diào)制

Punchthrough 穿通Push-pull stage 推挽級(jí)

Q

Quality factor 品質(zhì)因子Quantization 量子化Quantum 量子Quantum efficiency量子效應(yīng)Quantum mechanics 量子力學(xué)Quasi – Fermi－level準(zhǔn)費(fèi)米能級(jí)Quartz 石英

R

Radiation conductivity 輻射電導(dǎo)率

Radiation damage 輻射損傷Radiation flux density 輻射通量密度Radiation hardening 輻射加固Radiation protection 輻射保護(hù)Radiative - recombination輻照復(fù)合

Radioactive 放射性Reach through 穿通Reactive sputtering source 反應(yīng)濺射源

Read diode 里德二極管Recombination 復(fù)合Recovery diode 恢復(fù)二極管Reciprocal lattice 倒核子Recovery time 恢復(fù)時(shí)間Rectifier 整流器（管）Rectifying contact 整流接觸Reference 基準(zhǔn)點(diǎn) 基準(zhǔn) 參考點(diǎn)Refractive index 折射率

Register 寄存器Registration 對(duì)準(zhǔn)Regulate 控制 調(diào)整Relaxation lifetime 馳豫時(shí)間

Reliability 可靠性Resonance 諧振Resistance 電阻Resistor 電阻器Resistivity 電阻率Regulator 穩(wěn)壓管（器）

Relaxation 馳豫Resonant frequency共射頻率Response time 響應(yīng)時(shí)間Reverse 反向的Reverse bias 反向偏置

S

Sampling circuit 取樣電路Sapphire 藍(lán)寶石（Al2O3）Satellite valley 衛(wèi)星谷Saturated current range電流飽和區(qū)

Saturation region 飽和區(qū)Saturation 飽和的Scaled down 按比例縮小Scattering 散射Schockley diode 肖克萊二極管Schottky 肖特基Schottky barrier 肖特基勢(shì)壘Schottky contact 肖特基接觸

Schrodingen 薛定厄Scribing grid 劃片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 選擇性Self aligned 自對(duì)準(zhǔn)的Self diffusion 自擴(kuò)散Semiconductor 半導(dǎo)體Semiconductor-controlled rectifier 可控硅

Sendsitivity 靈敏度Serial 串行/串聯(lián)Series inductance 串聯(lián)電感Settle time 建立時(shí)間Sheet resistance 薄層電阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪聲

Shunt 分流Sidewall capacitance邊墻電容

Signal 信號(hào)Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 絕緣硅

Siliver whiskers 銀須Simple cubic 簡(jiǎn)立方Single crystal 單晶Sink 沉Skin effect 趨膚效應(yīng)Snap time 急變時(shí)間Sneak path 潛行通路Sulethreshold 亞閾的Solar battery/cell 太陽(yáng)能電池

Solid circuit 固體電路Solid Solubility 固溶度Sonband 子帶Source 源極Source follower 源隨器Space charge 空間電荷Specific heat(PT) 熱Speed-power product 速度功耗乘積

Spherical 球面的

Spin 自旋 Split 分裂Spontaneous emission 自發(fā)發(fā)射Spreading resistance擴(kuò)展電阻Sputter 濺射

Stacking fault 層錯(cuò)Static characteristic 靜態(tài)特性Stimulated emission 受激發(fā)射Stimulated recombination 受激復(fù)合Storage time 存儲(chǔ)時(shí)間

Stress 應(yīng)力Straggle 偏差Sublimation 升華Substrate 襯底Substitutional 替位式的Superlattice 超晶格Supply 電源

Surface 表面Surge capacity 浪涌能力Subscript 下標(biāo)Switching time 開(kāi)關(guān)時(shí)間Switch 開(kāi)關(guān)

T

Tailing 擴(kuò)展Terminal 終端Tensor 張量 Tensorial 張量的Thermal activation 熱激發(fā)Thermal conductivity 熱導(dǎo)率Thermal equilibrium 熱平衡Thermal Oxidation 熱氧化Thermal resistance 熱阻

Thermal sink 熱沉Thermal velocity 熱運(yùn)動(dòng)Thermoelectricpovoer 溫差電動(dòng)勢(shì)率Thick-film technique 厚膜技術(shù)Thin-film hybrid IC薄膜混合集成電路Thin-Film Transistor(TFT) 薄膜晶體

Threshlod 閾值Thyistor 晶閘管Transconductance 跨導(dǎo)Transfer characteristic 轉(zhuǎn)移特性Transfer electron 轉(zhuǎn)移電子Transfer function 傳輸函數(shù)

Transient 瞬態(tài)的Transistor aging(stress) 晶體管老化Transit time 渡越時(shí)間

Transition 躍遷Transition-metal silica 過(guò)度金屬硅化物Transition probability 躍遷幾率Transition region 過(guò)渡區(qū)Transport 輸運(yùn) Transverse 橫向的Trap 陷阱 Trapping 俘獲Trapped charge 陷阱電荷Triangle generator 三角波發(fā)生器

Triboelectricity 摩擦電Trigger 觸發(fā)Trim 調(diào)配 調(diào)整Triple diffusion 三重?cái)U(kuò)散Truth table 真值表Tolerahce 容差Tunnel(ing) 隧道（穿）Tunnel current 隧道電流Turn over 轉(zhuǎn)折Turn - off time 關(guān)斷時(shí)間

U

Ultraviolet 紫外的Unijunction 單結(jié)的Unipolar 單極的Unit cell 原（元）胞Unity-gain frequency 單位增益頻率Unilateral-switch單向開(kāi)關(guān)

V

Vacancy 空位

Vacuum 真空Valence(value) band 價(jià)帶

Value band edge 價(jià)帶頂Valence bond 價(jià)鍵

Vapour phase 汽相Varactor 變?nèi)莨?/p>

Varistor 變阻器Vibration 振動(dòng)

Voltage 電壓

W

Wafer 晶片Wave equation 波動(dòng)方程Wave guide 波導(dǎo)Wave number 波數(shù)Wave-particle duality 波粒二相性Wear-out 燒毀Wire routing 布線Work function 功函數(shù)Worst-case device 最壞情況器件

Y

Yield 成品率

Z

Zener breakdown 齊納擊穿Zone melting 區(qū)熔法